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3.工作经历
2010年1月～至今：天津大学电子信息工程学院
2005年9月～2009年12月：美国威斯康星大学麦迪逊分校电子工程系助研
2007年9月～2007年12月：美国威斯康星大学麦迪逊分校电子工程系助教
4.主要研究领域
柔性微波电子器件与电路的设计、建模与制造；
单晶纳米薄膜技术；
射频/微波电子器件及电路的研究；
高速功率SiGe HBT器件与电路。
5.科研成果
近五年代表性著作
1.G. Qin, H. Zhou, E. Rammaya, Z. Ma, and I. Knezevic, “Electron mobility in scaled silicon MOSFETs on off-axis substrates,” Applied Physics Letters, 2009, 94: 073504.
2.G. Qin, H.-C. Yuan, G.K. Celler, W. Zhou, and Z. Ma, “Flexible microwave PIN diodes and switches employing transferrable single-crystal Si nanomembranes on plastic substrates,” Journal of Physics D-Applied Physics, 2009, 42: 234006.
3.G. Qin, G. Wang, L.McCaughan, Z. Ma, “Superiority of common-base to common-emitter heterojunction bipolar transistors,” Applied Physics Letters, 2010, 97: 133506.
4.G. Qin, N. Jiang, J. Seo, N. Cho, G.E. Ponchack, D. van der Weide, P. Ma, S. Stetson, M. Racanelli, and Z. Ma, “Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier,” Semiconductor Science and Technology, 2010, 25: 125002.
(Semiconductor Science and Technology杂志2010年优秀论文: http://iopscience.iop.org/0268-1242/page/Highlights%20of%202010)
5.G. Qin, H.-C. Yuan, G.K. Celler, J. Ma, and Z. Ma, “Impact of strain on radio frequency characteristics of flexible microwave single-crystalline silicon nanomembrane p-intrinsic-n diodes on plastic substrates,” Applied Physics Letters, 2010, 97: 233110.
(Applied Physics Letters优秀论文被收录于 Journal of Nanoscale Science & Technology -- December 13, 2010 vol. 22, no. 25.)
6.G. Qin, H.-C. Yuan, H. Yang, W. Zhou, and Z. Ma, “High-performance flexible thin-film transistors fabricated using print-transferrable polycrystalline silicon membranes on a plastic substrate,” Semiconductor Science and Technology, 2010, 26: 025005.
7.G. Qin, H.-C. Yuan, G.K. Celler, W. Zhou, J. Ma, and Z. Ma, “RF model of flexible microwave single-crystalline silicon nanomembrane PIN diodes on plastic substrate,” Microelectronics Journal, 2011, 42: 509-514.
8.G. Qin, N. Jiang, G. Wang, and Z. Ma, “SiGe HBT linearity comparison between CE and CB configurations,” Semiconductor Science and Technology, 2007, 22: S216.
9.H.-C. Yuan, G. Qin (共同一作), G.K. Celler, and Z. Ma, “Bendable high-frequency microwave switches formed with single-crystal silicon nanomembranes on plastic substrates,” Applied Physics Letters, 2009, 95: 043109.
10.P.K.L. Chan, K.P. Pipe, G. Qin (共同一作), and Z. Ma, “Thermoreflectance imaging of current dynamics in high power SiGe heterojunction bipolar transistors,” Applied Physics Letters, 2006, 89: 233521.
11.L. Sun, G. Qin, J. Seo, G.K. Celler, W. Zhou, and Z. Ma, “12-GHz thin-film transistors on transferrable silicon nanomembranes for high-performance flexible electronics,” Small, 2010, 6: 2553-2557.
12.G. Qin, G. Wang, and Z. Ma, “Characteristic influence of DC bias on SiGe HBT linearity and power gain under different operation configurations,” SiG &Ge: Materials, Processing, and Devices, ECS(Electrochemical Society) Transactions, 2006, 3: 275-285.
13.Z. Ma and G. Qin, “Fast Flexible Electronics Made from Nanomembranes Derived from High-Quality Wafers,” Semiconductor Nanomaterials for Flexible Technologies, 2010, Chapter 3: 67-104.
14.Z. Mi, J. Yang, P. Bhattacharya, G. Qin, and Z. Ma, “High performance quantum dot lasers and integrated optoelectronics on Si,” Proceeding of IEEE, 2009, 97: 1239-1249.
15.G. Qin, G. Wang, and Z. Ma, “Enhancement of SiGe HBT Linearity Characteristics with Current Source Bias,” Digest of Papers-2009 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2009: 84-87.
16.L. Sun, G. Qin, H. Huang, H. Zhou, N. Behdad, W. Zhou, and Z. Ma, “Flexible high-frequency microwave inductors and capacitors integrated on a polyethylene terephthalate substrate,” Applied Physics Letters, 2010, 96: 013509.
17.H.-C. Yuan, J. Shin, G. Qin, L. Sun, P. Bhattacharya, M. Lagally, G.K. Celler, and Z. Ma, “Flexible photodetectors on plastic substrates by use of printing transferred single-crystal germanium membranes,” Applied Physics Letters, 2009, 94: 013102.
另有10篇会议论文。
授权专利
High-Power Common-Base Amplifier Employing Current Source Output Bias， 美国国家专利授权号US7830208B2
申请（或公示）第一发明人专利6项。
6.获奖情况
1.2011年 获天津大学十佳杰出青年称号
2.2008年 获国际会议Silicon Monolithic Integrated Circuits in RF Systems Conference (Orlando, FL, USA)最佳论文奖
3.2008年 获威斯康星大学麦迪逊分校电子工程系优秀博士生奖金
4.2009年 获威斯康星大学麦迪逊分校Vilas奖学金
5.2005年 获清华大学优良毕业生称号
7.科研项目
作为负责人承担国家自然科学基金青年基金等科研项目3项。
作为骨干参与科技部国际科技合作项目等科研项目5项。
8.联系方式
Email: gqin@tju.edu.cn
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